tl0640h thru tl3500h features oxide glass passivated junction bidirectional protection in a single device surge capabilities up to 100a @ 10/1000us or 400 @ 8/20us high off state impedance and low on state voltage plastic material has ul flammability classification 94v-0 mechanical data case : molded plastic polarity : denotes none cathode band weight : 0.093 grams surface mount thyristor surge protective device vdrm - 58 to 320 volts ipp - 100 amperes maximum ratings maximum rated surge waveform waveform thermal resistance /w unit symbol %/ junction to leads characteristics typical positive temperature coefficient for brekdown voltage rth (j-l) v br / t j 0.1 value 20 100 junction to ambient on print circuit (on recommended pad layout) rth (j-a) /w 2/10 us 8/20 us 10/160 us 10/700 us 10/560 us 10/1000 us standard gr-1089-core iec 61000-4-5 fcc part 68 itu-t k20/21 fcc part 68 gr-1089-core i pp (a) 500 400 250 200 160 100 i pp , peak pulse current (%) 100 50 0 tr tp time half value peak value (ipp) tr= rise time to peak value tp= decay time to half value semiconductor lite-on bi-directional unit symbol non-repetitive peak impulse current @ 10/1000us characteristics storage temperature range i pp i tsm t stg a a -55 to +150 value 100 50 non-repetitive peak on-state current @ 8.3ms (one half cycle) junction temperature range t j -40 to +150 rev. 0, 03-dec-2001, kdwe01 all dimensions in millimeter max. min. do-201ad dim. a d c b 25.4 9.50 - 7.30 1.20 4.80 5.30 1.30 do-201ad a c d a b
symbol v drm i drm v br i br v bo i bo parameter stand-off voltage leakage current at stand-off voltage breakdown voltage breakdown current breakover voltage holding current note: 1 i h v t i pp c o on state voltage peak pulse current off state capacitance note: 2 breakover current v drm i drm v br i br v bo i bo i h v t i pp v i notes: 1. i h > (v l /r l ) if this criterion is not obeyed, the t spd triggers but does not return correctly to high-resistance state. the surge recovery time does not exceed 30ms. 2. off-state capacitance measured at f=1.0mhz; 1.0v rms signal; vr=2v dc bias. tl0640h tl0720h 75 58 65 tl0900h tl1100h tl1300h tl1500h tl1800h TL2300H tl2600h tl3100h tl3500h 140 90 120 220 160 190 275 320 5 5 5 5 5 5 5 5 5 5 5 98 77 88 180 130 160 300 220 265 350 400 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 150 150 150 150 150 150 150 150 150 150 150 200 200 200 120 120 120 80 120 80 80 80 50 50 50 50 50 50 50 50 50 50 50 max parameter symbol units limit rated repetitive off-state voltage off-state leakage current @ v drm breakover voltage on-state voltage @ i t =1.0a holding current off-state capacitance max max max min max min typ v drm i drm v bo v t i bo -i bo+ i h- co volts ua volts volts ma ma ma pf electrical characteristics @ t a= 25 unless otherwise specified tl0640h thru tl3500h breakover current 800 800 800 800 800 800 800 800 800 800 800 max i h+ ma 800 800 800 800 800 800 800 800 800 800 800 rev. 0, 03-dec-2001, kdwe01
fig.1 - off state current vs junction temperature i( drm) , off state current (ua) t j , junction temperature ( ) v drm =50v 100 10 1.0 0.1 0.001 0.01 -25 0 25 50 75 100 125 150 t j , junction temperature ( ) -50 -25 0 25 50 75 125 150 normalized breakdown voltage 1.20 1.10 1.05 1.0 0.90 0.95 1.15 v br (t j ) v br (t j =25 ) 100 175 fig. 2 - relative variation of breakdown voltage vs junction temperature t j , junction temperature ( ) -50 -25 0 25 50 75 125 150 normalized breakover voltage 1.10 1.05 1.0 0.95 100 175 fig. 3 - relative variation of breakover voltage vs junction temperature 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 5.0 v (t); on state voltage i (t) , on state current fig. 4 - on state current vs on state voltage 1.0 10 100 t j =25 t j , junction temperature ( ) normalized holding current fig. 5 - relative variation of holding current vs junction temperature vr, reverse voltage normalize capacitance fig. 6 - relative variation of junction capacitance vs reverse voltage bias rating and characteristics curves tl0640h thru tl3500h -50 -25 0 25 50 75 100 125 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1 10 100 0.1 1 tj =25 f=1mhz v rms = 1v c o (vr) c o (vr = 1v) ih (t j ) ih (t j =25 ) v bo (t j ) v bo (t j =25 ) rev. 0, 03-dec-2001, kdwe01
the ptc (positive temperature coefficient) is an overcurrent protection device telecom equipment e.g. modem fuse tspd 1 ring tip telecom equipment e.g. line card ring tip tspd 2 tspd 3 ptc ptc tspd 1 telecom equipment e.g. isdn tspd 1 ring tip tspd 2 ptc ptc typical circuit applications tl0640h thru tl3500h rev. 0, 03-dec-2001, kdwe01
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